• DocumentCode
    3024027
  • Title

    Optical properties of Zinc doped tin oxide synthesized by mechanochemical processing

  • Author

    Saa, S.N. ; Zakaria, A. ; Talari, M.K. ; Sabri, N.S. ; Hashim, U.

  • Author_Institution
    Nanostruct. Lab.-on-chip Res. Group, Univ. Malaysia Perlis (UniMAP), Kangar, Malaysia
  • fYear
    2012
  • fDate
    19-21 Sept. 2012
  • Firstpage
    200
  • Lastpage
    204
  • Abstract
    Simple doping process of Zinc (Zn) with Tin oxide (SnO2) was successfully prepared by the mechanochemical process, followed by a heat treatment and leaching. The raw materials are Tin Chloride (SnCl2) as a base element, Sodium Carbonate (Na2CO3) as an oxidizer and Sodium chloride (NaCl) as a diluent, while Zinc Chloride (ZnCl2) as a doping element. In this paper, we with fix wavelength investigated the effect of different concentration of Zn dopant on the optical properties of SnO2. The chemical formula of doped SnO2 will be Sn1-xZnxO2. The peaks of the X-ray Diffraction (XRD) prove that all Zn had been successfully doped into SnO2 host. The average sizes of crystalline were around 25 to 44 mm and it was calculated by using Scherrer´s equation. While Ultraviolet-visible spectroscopy (UV-VIS) and photoluminescence were used to analyze the energy gap differences of pure SnO2 and doped SnO2 with varying Zn concentration. Results show that increasing in the concentration can decrease the volume of samples. Red shift in energy gap (Eg) with an increasing Zn concentration (x ≤ 0.06) could be attributed to the Burstein-Moss effect that relates the Eg with the crystallite size of SnO2 formed before and after the doping process. The blue shift in Eg at x>;0.06 was possibly due to excess oxygen and may also be affected by sudden increases in crystallite size. The emission intensity was changed inversely with the Eg.
  • Keywords
    X-ray diffraction; crystallites; doping profiles; energy gap; heat treatment; leaching; nanofabrication; nanoparticles; photoluminescence; red shift; semiconductor doping; tin compounds; ultraviolet spectra; visible spectra; zinc compounds; Burstein-Moss effect; Scherrer equation; Sn1-xZnxO2; UV-vis spectra; X-ray diffraction; XRD; base element; blue shift; chemical formula; crystalline sizes; diluent; dopant concentration; doping element; doping process; emission intensity; energy gap; heat leaching; heat treatment; mechanochemical processing; n-type semiconductor; optical properties; photoluminescence; raw materials; red shift; size 25 mm to 44 mm; ultraviolet-visible spectroscopy; Doping; Materials; Nanoparticles; Photonic band gap; Tin; X-ray scattering; Zinc; Mechanochemical; Optical properties; Zinc doped tin oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Electronics (ICSE), 2012 10th IEEE International Conference on
  • Conference_Location
    Kuala Lumpur
  • Print_ISBN
    978-1-4673-2395-6
  • Electronic_ISBN
    978-1-4673-2394-9
  • Type

    conf

  • DOI
    10.1109/SMElec.2012.6417123
  • Filename
    6417123