DocumentCode :
3024027
Title :
Optical properties of Zinc doped tin oxide synthesized by mechanochemical processing
Author :
Saa, S.N. ; Zakaria, A. ; Talari, M.K. ; Sabri, N.S. ; Hashim, U.
Author_Institution :
Nanostruct. Lab.-on-chip Res. Group, Univ. Malaysia Perlis (UniMAP), Kangar, Malaysia
fYear :
2012
fDate :
19-21 Sept. 2012
Firstpage :
200
Lastpage :
204
Abstract :
Simple doping process of Zinc (Zn) with Tin oxide (SnO2) was successfully prepared by the mechanochemical process, followed by a heat treatment and leaching. The raw materials are Tin Chloride (SnCl2) as a base element, Sodium Carbonate (Na2CO3) as an oxidizer and Sodium chloride (NaCl) as a diluent, while Zinc Chloride (ZnCl2) as a doping element. In this paper, we with fix wavelength investigated the effect of different concentration of Zn dopant on the optical properties of SnO2. The chemical formula of doped SnO2 will be Sn1-xZnxO2. The peaks of the X-ray Diffraction (XRD) prove that all Zn had been successfully doped into SnO2 host. The average sizes of crystalline were around 25 to 44 mm and it was calculated by using Scherrer´s equation. While Ultraviolet-visible spectroscopy (UV-VIS) and photoluminescence were used to analyze the energy gap differences of pure SnO2 and doped SnO2 with varying Zn concentration. Results show that increasing in the concentration can decrease the volume of samples. Red shift in energy gap (Eg) with an increasing Zn concentration (x ≤ 0.06) could be attributed to the Burstein-Moss effect that relates the Eg with the crystallite size of SnO2 formed before and after the doping process. The blue shift in Eg at x>;0.06 was possibly due to excess oxygen and may also be affected by sudden increases in crystallite size. The emission intensity was changed inversely with the Eg.
Keywords :
X-ray diffraction; crystallites; doping profiles; energy gap; heat treatment; leaching; nanofabrication; nanoparticles; photoluminescence; red shift; semiconductor doping; tin compounds; ultraviolet spectra; visible spectra; zinc compounds; Burstein-Moss effect; Scherrer equation; Sn1-xZnxO2; UV-vis spectra; X-ray diffraction; XRD; base element; blue shift; chemical formula; crystalline sizes; diluent; dopant concentration; doping element; doping process; emission intensity; energy gap; heat leaching; heat treatment; mechanochemical processing; n-type semiconductor; optical properties; photoluminescence; raw materials; red shift; size 25 mm to 44 mm; ultraviolet-visible spectroscopy; Doping; Materials; Nanoparticles; Photonic band gap; Tin; X-ray scattering; Zinc; Mechanochemical; Optical properties; Zinc doped tin oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Electronics (ICSE), 2012 10th IEEE International Conference on
Conference_Location :
Kuala Lumpur
Print_ISBN :
978-1-4673-2395-6
Electronic_ISBN :
978-1-4673-2394-9
Type :
conf
DOI :
10.1109/SMElec.2012.6417123
Filename :
6417123
Link To Document :
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