Title :
Structural Dependence of Optical Gain and Carrier Losses in InGaN Quantum Well Lasers
Author :
Hader, J. ; Moloney, J.V. ; Koch, S.W.
Author_Institution :
Univ. of Arizona, Tucson
Abstract :
Using fully microscopic models it is shown that piezoelectric fields in InGaN/GaN quantum well structures lead to complex structural dependencies of the optical gain and carrier losses resulting in non-trivial minima for the threshold current.
Keywords :
III-V semiconductors; quantum well lasers; semiconductor optical amplifiers; wide band gap semiconductors; InGaN-GaN; carrier losses; microscopic models; optical gain; piezoelectric fields; quantum well lasers; Absorption; Electron optics; Nonlinear optics; Optical losses; Optical microscopy; Optical scattering; Photonic band gap; Quantum well lasers; Spontaneous emission; Stimulated emission;
Conference_Titel :
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-834-6
DOI :
10.1109/CLEO.2007.4453595
