• DocumentCode
    3024085
  • Title

    The effect of isopropyl alcohol on anisotropic etched silicon for the fabrication of microheater chamber

  • Author

    Hamid, N.A. ; Majlis, Burhanuddin Yeop ; Yunas, Jumril ; Noor, Mimiwaty Mohd

  • Author_Institution
    Inst. of Microeng. & Nanoelectron. (IMEN), Univ. Kebangsaan Malaysia (UKM), Bangi, Malaysia
  • fYear
    2012
  • fDate
    19-21 Sept. 2012
  • Firstpage
    210
  • Lastpage
    213
  • Abstract
    In bulk micromachining technology, anisotropic etching process has been one of the most popular processes in creating 3-dimensional MEMS structure, due to its simple and low cost process techniques. This paper presents the investigation of isopropyl alcohol (IPA) effect on anisotropic etched silicon surface of microheater chamber. The aim of the study is to find the optimal etch solution composition which will produce a smooth etched surface, low lateral etch (undercutting) effect and controllable etching rate. The etching process was carried out at with various potassium hydroxide (KOH) concentrations by adding various IPA compositions in the etchant solution. The effects of the solution were observed for several temperature conditions ranging from 50°C to 80°C. From the experimental results, it was observed that surface roughness and etch rate are highly dependent on the temperature, etchant composition and IPA concentrations in the solution. It can also be concluded that the addition of an appropriate IPA concentration provide a simple method in achieving a smooth and controlled etching of silicon substrate that plays an important factor in the fabrication of micro-heater chamber.
  • Keywords
    etching; 3D MEMS structure; IPA concentration; anisotropic etched silicon surface; anisotropic etching process; bulk micromachining technology; controllable etching rate; controlled etching; etch rate; etchant composition; etchant solution; isopropyl alcohol; microheater chamber; optimal etch solution composition; potassium hydroxide concentration; silicon substrate; smooth etched surface; surface roughness; Etching; Morphology; Rough surfaces; Silicon; Surface morphology; Surface roughness;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Electronics (ICSE), 2012 10th IEEE International Conference on
  • Conference_Location
    Kuala Lumpur
  • Print_ISBN
    978-1-4673-2395-6
  • Electronic_ISBN
    978-1-4673-2394-9
  • Type

    conf

  • DOI
    10.1109/SMElec.2012.6417125
  • Filename
    6417125