DocumentCode
3024173
Title
DC MEMS switches with self-x features: Design, simulation and implementation strategies
Author
Johar, M.A. ; Torruella, P. ; Konig, Alexandra
Author_Institution
Dept. of Electr. & Comput. Eng., Tech. Univ. Kaiserslautern, Kaiserslautern, Germany
fYear
2012
fDate
19-21 Sept. 2012
Firstpage
229
Lastpage
233
Abstract
Successful MEMS products depend on device reliability to perform their function. While many MEMS products have been introduced into the mass market, a lot of work is now concentrated on adding functionality and reliability. This paper will layout the idea of the implementation of self-x features in MEMS DC switches to improve these characteristics. It introduces the self-monitoring and self-repairing functions at component level. Special additional structures have been added into the MEMS DC Switch device to give these additional functionality. Our MEMS switches are designed using the MetalMUMPs technology offered by MEMSCAP. Our switch proposal uses lateral switching movement with metal to metal contact, with a gap of 10μm. It is equipped with two moveable structures with electrostatic actuation as primary source of force. Heat actuators are used for self-repairing procedures. Our initial simulation results show an actuation voltage of around 92V for the electrostatic actuation and a resonance frequency of 6.724kHz.
Keywords
microswitches; reliability; DC MEMS switches; MEMSCAP; MetalMUMP technology; device reliability; electrostatic actuation; frequency 6.724 kHz; heat actuators; resonance frequency; selfmonitoring function; selfrepairing function; size 10 mum; voltage 92 V; Contacts; Electrostatic actuators; Micromechanical devices; Microswitches; Resonant frequency;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Electronics (ICSE), 2012 10th IEEE International Conference on
Conference_Location
Kuala Lumpur
Print_ISBN
978-1-4673-2395-6
Electronic_ISBN
978-1-4673-2394-9
Type
conf
DOI
10.1109/SMElec.2012.6417129
Filename
6417129
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