DocumentCode
3024249
Title
Optical properties of zinc oxide films growth on Si substrate via aqueous chemical growth
Author
Bakar, Marini Abu ; Hamid, Muhammad Azmi Abd ; Jalar, A. ; Shamsudin, R.
Author_Institution
Sch. of Appl. Phys., Univ. Kebangsaan Malaysia, Bangi, Malaysia
fYear
2012
fDate
19-21 Sept. 2012
Firstpage
242
Lastpage
245
Abstract
This paper presents a methodology to synthesized zinc oxide (ZnO) films by an aqueous chemical growth based technique. Structural, morphology and optical properties of ZnO films were characterized using X-ray diffractometry (XRD), field emission scanning electron microscopy (FESEM) and UV-Visible spectroscopy. This paper aims to study the effect of growth time on the structural, morphology and optical properties of ZnO films. XRD patterns showed a well-defined (101) peak that indicates the crystalline hexagonal ZnO structure. FESEM results revealed hexagonal rods structures growth on Si substrate from 1.5 h to 3 h growth time. The optical band gap for ZnO film has increased from 3.80 eV to 3.90 eV with the increasing of growth time. This result shows that the growth time have influences on the structural, morphology and optical properties of ZnO films.
Keywords
X-ray diffractometers; rods (structures); scanning electron microscopy; substrates; ultraviolet spectroscopy; FESEM; UV visible spectroscopy; X-ray diffractometry; XRD patterns; aqueous chemical growth; field emission scanning electron microscopy; hexagonal rods structures growth; morphology; optical band gap; optical property; substrate; synthesized zinc oxide film; zinc oxide films growth; Optical diffraction; Optical films; Optical sensors; Silicon; Substrates; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Electronics (ICSE), 2012 10th IEEE International Conference on
Conference_Location
Kuala Lumpur
Print_ISBN
978-1-4673-2395-6
Electronic_ISBN
978-1-4673-2394-9
Type
conf
DOI
10.1109/SMElec.2012.6417132
Filename
6417132
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