DocumentCode :
3024249
Title :
Optical properties of zinc oxide films growth on Si substrate via aqueous chemical growth
Author :
Bakar, Marini Abu ; Hamid, Muhammad Azmi Abd ; Jalar, A. ; Shamsudin, R.
Author_Institution :
Sch. of Appl. Phys., Univ. Kebangsaan Malaysia, Bangi, Malaysia
fYear :
2012
fDate :
19-21 Sept. 2012
Firstpage :
242
Lastpage :
245
Abstract :
This paper presents a methodology to synthesized zinc oxide (ZnO) films by an aqueous chemical growth based technique. Structural, morphology and optical properties of ZnO films were characterized using X-ray diffractometry (XRD), field emission scanning electron microscopy (FESEM) and UV-Visible spectroscopy. This paper aims to study the effect of growth time on the structural, morphology and optical properties of ZnO films. XRD patterns showed a well-defined (101) peak that indicates the crystalline hexagonal ZnO structure. FESEM results revealed hexagonal rods structures growth on Si substrate from 1.5 h to 3 h growth time. The optical band gap for ZnO film has increased from 3.80 eV to 3.90 eV with the increasing of growth time. This result shows that the growth time have influences on the structural, morphology and optical properties of ZnO films.
Keywords :
X-ray diffractometers; rods (structures); scanning electron microscopy; substrates; ultraviolet spectroscopy; FESEM; UV visible spectroscopy; X-ray diffractometry; XRD patterns; aqueous chemical growth; field emission scanning electron microscopy; hexagonal rods structures growth; morphology; optical band gap; optical property; substrate; synthesized zinc oxide film; zinc oxide films growth; Optical diffraction; Optical films; Optical sensors; Silicon; Substrates; Zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Electronics (ICSE), 2012 10th IEEE International Conference on
Conference_Location :
Kuala Lumpur
Print_ISBN :
978-1-4673-2395-6
Electronic_ISBN :
978-1-4673-2394-9
Type :
conf
DOI :
10.1109/SMElec.2012.6417132
Filename :
6417132
Link To Document :
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