DocumentCode
3024250
Title
Emission Characteristics of InGaN/GaN Vertical-Cavity Surface-Emitting Lasers
Author
Chu, Jung-Tang ; Lu, Tien-Chang ; Kuo, Hao-Chung ; Wang, Shing-Chung
Author_Institution
Nat. Chiao Tung Univ., Hsinchu
fYear
2007
fDate
6-11 May 2007
Firstpage
1
Lastpage
2
Abstract
Lasing characteristics of optically pumped GaN-based vertical-cavity surface-emitting lasers were investigated. The laser emission showed single and multiple spots emission patterns with spectral and spatial variation under different pumping conditions.
Keywords
III-V semiconductors; gallium compounds; indium compounds; surface emitting lasers; wide band gap semiconductors; InGaN-GaN; emission characteristics; spots emission patterns; vertical-cavity surface-emitting lasers; Apertures; Gallium nitride; Indium; Laser excitation; Optical pumping; Pump lasers; Quantum well devices; Stimulated emission; Surface emitting lasers; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location
Baltimore, MD
Print_ISBN
978-1-55752-834-6
Type
conf
DOI
10.1109/CLEO.2007.4453603
Filename
4453603
Link To Document