DocumentCode
3024285
Title
Carrier capture and recombination in 2.4μm GaSb-based type-I quantum well high power diode lasers
Author
Shterengas, L. ; Donetsky, D. ; Kisin, M. ; Belenky, G.
Author_Institution
State Univ. of New York, Stony Brook
fYear
2007
fDate
6-11 May 2007
Firstpage
1
Lastpage
2
Abstract
Carrier lifetime of 2 ns was measured in GaSb-based type-I quantum-well high power laser heterostructures at threshold carrier concentration. Increased carrier capture rate was observed in laser heterostructures with reduced waveguide thickness.
Keywords
III-V semiconductors; carrier density; carrier lifetime; gallium compounds; quantum well lasers; GaSb; GaSb-based type-I quantum well; carrier capture; carrier concentration; carrier lifetime; carrier recombination; high power diode lasers; Charge carrier lifetime; Diode lasers; Gas lasers; Laser excitation; Optical waveguides; Power lasers; Quantum well lasers; Radiative recombination; Semiconductor lasers; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location
Baltimore, MD
Print_ISBN
978-1-55752-834-6
Type
conf
DOI
10.1109/CLEO.2007.4453605
Filename
4453605
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