Title :
Carrier capture and recombination in 2.4μm GaSb-based type-I quantum well high power diode lasers
Author :
Shterengas, L. ; Donetsky, D. ; Kisin, M. ; Belenky, G.
Author_Institution :
State Univ. of New York, Stony Brook
Abstract :
Carrier lifetime of 2 ns was measured in GaSb-based type-I quantum-well high power laser heterostructures at threshold carrier concentration. Increased carrier capture rate was observed in laser heterostructures with reduced waveguide thickness.
Keywords :
III-V semiconductors; carrier density; carrier lifetime; gallium compounds; quantum well lasers; GaSb; GaSb-based type-I quantum well; carrier capture; carrier concentration; carrier lifetime; carrier recombination; high power diode lasers; Charge carrier lifetime; Diode lasers; Gas lasers; Laser excitation; Optical waveguides; Power lasers; Quantum well lasers; Radiative recombination; Semiconductor lasers; Waveguide lasers;
Conference_Titel :
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-834-6
DOI :
10.1109/CLEO.2007.4453605
