Investigation of incorporating dielectric pocket (DP) on Vertical Strained-SiGe Impact Ionization MOSFET (VESIMOS-DP)

Author

Saad, Ismail ; Zuhir, H. Mohd ; Pogaku, Divya ; Bakar, A. R. Abu ; Bolong, Nurmin ; Khairul, A.M. ; Ghosh, Bablu ; Ismail, Riyad ; Hashim, U.

Author_Institution

Nano Eng. & Mater. (NEMs) Res. Group, Univ. Malaysia Sabah, Kota Kinabalu, Malaysia

fYear

2012

fDate

19-21 Sept. 2012

Firstpage

249

Lastpage

253

Abstract

The Vertical Strained Silicon Germanium (SiGe) Impact Ionization MOSFET with Dielectric Pocket (VESIMOS-DP) has been successfully developed and analyzed in this paper. Due to the DP layer, improve stability of threshold voltage, VT was found for VESIMOS-DP device of various DP size ranging from 20nm to 80nm. The stability is due to the reducing charge sharing effects between source and drain region. However, the presence of DP layer has introduced another potential barrier in addition to δp+ triangular potential barrier. Thus, increased amount of gate source voltage for lowering both barriers and allows the electron to move from source to drain. Accordingly, slight different and consistency of VESIMOS-DP sub-threshold value as compared to VESIMOS has revealed to give advantages for incorporating DP layer near the drain end. Moreover, the DP layer has suppressed the parasitic bipolar transistor effect with higher breakdown voltage as compared to without DP layer.

Keywords

MOSFET; bipolar transistors; impact ionisation; semiconductor device breakdown; silicon compounds; DP layer; SiGe; VESIMOS-DP; breakdown voltage; charge sharing effects; dielectric pocket; gate source voltage; parasitic bipolar transistor effect; potential barrier; source and drain region; stability; threshold voltage; vertical strained silicon germanium impact ionization; vertical strained-impact ionization MOSFET; Dielectrics; Doping; Impact ionization; MOSFET circuits; Silicon; Silicon germanium; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Electronics (ICSE), 2012 10th IEEE International Conference on

Conference_Location

Kuala Lumpur

Print_ISBN

978-1-4673-2395-6

Electronic_ISBN

978-1-4673-2394-9

Type

conf

DOI

10.1109/SMElec.2012.6417134

Filename

6417134