DocumentCode :
3024401
Title :
Substrate noise suppression technique for power integrity of TSV 3D integration
Author :
Po-Jen Yang ; Po-Tsang Huang ; Wei Hwang
Author_Institution :
Dept. of Electron. Eng. & Inst. of Electron., Nat. Chiao-Tung Univ., Hsinchu, Taiwan
fYear :
2012
fDate :
20-23 May 2012
Firstpage :
3274
Lastpage :
3277
Abstract :
In this paper, a substrate noise suppression technique is proposed for the power integrity of TSV 3D integrations. This substrate noise suppression technique reduces both substrate and TSV coupling noises using active substrate decouplers (ASDs) to absorb the substrate noise current. Additionally, the ASD placing is also presented to suppress noises effectively for different 3D structures. For a processor-memory stacking integration, the ground bouncing noises can be reduced by 44.1% via the noise suppression technique. The proposed substrate noise suppression technique can enhance the power integrity of TSV 3D-ICs by reducing the coupling substrate noises.
Keywords :
integrated circuit noise; power integrated circuits; three-dimensional integrated circuits; ASD; TSV 3D integration; TSV coupling noises; active substrate decouplers; power integrity; substrate noise suppression technique; Analog circuits; Couplings; Noise; Random access memory; Substrates; Through-silicon vias; Variable speed drives;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems (ISCAS), 2012 IEEE International Symposium on
Conference_Location :
Seoul
ISSN :
0271-4302
Print_ISBN :
978-1-4673-0218-0
Type :
conf
DOI :
10.1109/ISCAS.2012.6272024
Filename :
6272024
Link To Document :
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