Title :
Substrate noise suppression technique for power integrity of TSV 3D integration
Author :
Po-Jen Yang ; Po-Tsang Huang ; Wei Hwang
Author_Institution :
Dept. of Electron. Eng. & Inst. of Electron., Nat. Chiao-Tung Univ., Hsinchu, Taiwan
Abstract :
In this paper, a substrate noise suppression technique is proposed for the power integrity of TSV 3D integrations. This substrate noise suppression technique reduces both substrate and TSV coupling noises using active substrate decouplers (ASDs) to absorb the substrate noise current. Additionally, the ASD placing is also presented to suppress noises effectively for different 3D structures. For a processor-memory stacking integration, the ground bouncing noises can be reduced by 44.1% via the noise suppression technique. The proposed substrate noise suppression technique can enhance the power integrity of TSV 3D-ICs by reducing the coupling substrate noises.
Keywords :
integrated circuit noise; power integrated circuits; three-dimensional integrated circuits; ASD; TSV 3D integration; TSV coupling noises; active substrate decouplers; power integrity; substrate noise suppression technique; Analog circuits; Couplings; Noise; Random access memory; Substrates; Through-silicon vias; Variable speed drives;
Conference_Titel :
Circuits and Systems (ISCAS), 2012 IEEE International Symposium on
Conference_Location :
Seoul
Print_ISBN :
978-1-4673-0218-0
DOI :
10.1109/ISCAS.2012.6272024