Title :
Polycrystalline p-β-FeSi2(Al) on n-Si(100): Heterojunction thin-film solar cells
Author :
Bag, A. ; Mallik, S. ; Mahata, C. ; Maiti, C.K.
Author_Institution :
Dept. of Electron. & ECE, Indian Inst. of Technol., Kharagpur, Kharagpur, India
Abstract :
Photovoltaic properties of solar cells based on aluminum (Al) alloyed polycrystalline p-type β-phase iron disilicide [p-β-FeSi2(Al)]/n-type Si(100) bi-layer heterojunctions are reported. Current density-voltage and photo response characteristics were measured at room temperature. Short circuit current density of ~26 mA/cm2 and open-circuit voltage of ~335 mV were obtained for p-β-FeSi2(Al)/p+-Si/n-Si(100) cells with indium-tin-oxide (ITO) as top electrode. Under air mass (AM) 1.5 illumination, the cell showed a conversion efficiency of 3.0%. The device showed a series resistance of 103.95 Ω, a high shunt resistance of 761 Ω, and an ideality factor of 1.135, resulting in a fill factor of 34.4%.
Keywords :
semiconductor thin films; solar cells; Photovoltaic properties; air mass; bilayer heterojunction; conversion efficiency; density voltage; heterojunction thin film solar cells; ideality factor; iron disilicide; open circuit voltage; photo response characteristics; polycrystalline; resistance 103.95 ohm; resistance 761 ohm; room temperature; series resistance; short circuit current density; shunt resistance; Films; Heterojunctions; Indium tin oxide; Photovoltaic cells; Resistance; Silicon; Substrates;
Conference_Titel :
Semiconductor Electronics (ICSE), 2012 10th IEEE International Conference on
Conference_Location :
Kuala Lumpur
Print_ISBN :
978-1-4673-2395-6
Electronic_ISBN :
978-1-4673-2394-9
DOI :
10.1109/SMElec.2012.6417142
