• DocumentCode
    3024562
  • Title

    Above room-temperature operation of InAs/AlSb quantum cascade lasers

  • Author

    Moriyasu, Y. ; Ohtani, K. ; Ohnishi, H. ; Ohno, H.

  • Author_Institution
    Tohoku Univ., Sendai
  • fYear
    2007
  • fDate
    6-11 May 2007
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Above room temperature operation of InAs/AlSb quantum cascade lasers emitting at around 6 mum are reported. The emission originates from the vertical transition in double quantum wells. The threshold current in pulsed mode is 5.3 kA/cm2 at 300 K and maximum operating temperature is 373 K.
  • Keywords
    III-V semiconductors; aluminium compounds; indium compounds; quantum cascade lasers; InAs-AlSb; above room-temperature operation; double quantum wells; emission; pulsed mode; quantum cascade lasers; temperature 300 K to 373 K; Capacitive sensors; Molecular beam epitaxial growth; Optical pulses; Optical waveguides; Quantum cascade lasers; Strain measurement; Substrates; Temperature; Threshold current; X-ray diffraction;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-55752-834-6
  • Type

    conf

  • DOI
    10.1109/CLEO.2007.4453616
  • Filename
    4453616
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3024562