Title :
Above room-temperature operation of InAs/AlSb quantum cascade lasers
Author :
Moriyasu, Y. ; Ohtani, K. ; Ohnishi, H. ; Ohno, H.
Author_Institution :
Tohoku Univ., Sendai
Abstract :
Above room temperature operation of InAs/AlSb quantum cascade lasers emitting at around 6 mum are reported. The emission originates from the vertical transition in double quantum wells. The threshold current in pulsed mode is 5.3 kA/cm2 at 300 K and maximum operating temperature is 373 K.
Keywords :
III-V semiconductors; aluminium compounds; indium compounds; quantum cascade lasers; InAs-AlSb; above room-temperature operation; double quantum wells; emission; pulsed mode; quantum cascade lasers; temperature 300 K to 373 K; Capacitive sensors; Molecular beam epitaxial growth; Optical pulses; Optical waveguides; Quantum cascade lasers; Strain measurement; Substrates; Temperature; Threshold current; X-ray diffraction;
Conference_Titel :
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-834-6
DOI :
10.1109/CLEO.2007.4453616
