DocumentCode
3024622
Title
The role of Reactive Ion Etching(RIE) on wirebond formation: A study on successful rate of thermosonic gold wire on aluminium bondpad
Author
Sauli, Zaliman ; Retnasamy, Vithyacharan ; Rahman, N.A.Z. ; Aziz, M.H.A. ; Razak, Hanim Abdul ; Palianysamy, M.
Author_Institution
Sch. of Microelectron. Eng., Univ. Malaysia Perlis (UniMAP), Alam Pauh Putra, Malaysia
fYear
2012
fDate
19-21 Sept. 2012
Firstpage
311
Lastpage
315
Abstract
Wire bond has been an important tool in the world of microelectronic interconnections. The effect of Reactive Ion Etching (RIE) on the successful rate of thermosonic bonding using gold wire on aluminium pad is studied. Surface morphology images from Atomic Force Microscopy (AFM) are used as correlation comparison. In this work wire bonding adhesion is studied on two different surface conditions, which are treated with RIE and the other without RIE treatment. In this experiment only the bonding time was varied for each set of experiments. Results of the wire bond from both samples, with and without RIE were compared. The RIE treated surfaces yield better adhesion results in this work.
Keywords
adhesive bonding; aluminium; atomic force microscopy; gold; lead bonding; sputter etching; surface morphology; AFM; Al; Au; aluminium bondpad; atomic force microscopy; microelectronic interconnections; reactive ion etching; surface conditions; surface morphology images; thermosonic bonding; thermosonic gold wire; wire bonding adhesion; wirebond formation; Aluminum; Bonding; Etching; Gold; Surface morphology; Wires; Thermosonic; bonding time; reactive ion etching;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Electronics (ICSE), 2012 10th IEEE International Conference on
Conference_Location
Kuala Lumpur
Print_ISBN
978-1-4673-2395-6
Electronic_ISBN
978-1-4673-2394-9
Type
conf
DOI
10.1109/SMElec.2012.6417148
Filename
6417148
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