• DocumentCode
    3024909
  • Title

    Error control coding and signal processing for flash memories

  • Author

    Shin, Beomkyu ; Seol, Changkyu ; Chung, Jung-Soo ; Kong, Jun Jin

  • Author_Institution
    Memory Bus., Samsung Electron., Hwaseong, South Korea
  • fYear
    2012
  • fDate
    20-23 May 2012
  • Firstpage
    409
  • Lastpage
    412
  • Abstract
    With the rapid advances in the area of memory product, it has become more and more important to maintain its reliability while increasing the density and speed performance. Particularly, flash memory products have inherent difficulties in lengthening the limited lifetime due to the degradation of memory cell reliability caused by repeated read and/or write operations. To increase the benefits of high density flash memory, more advanced techniques such as multi-leveling the cell and signal processing has been adopted to the flash memory products. In this paper, arising challenges that leading engineers in semiconductor memory industries have confronted will be shared to further develop cutting-edge flash memory products.
  • Keywords
    coding errors; flash memories; integrated circuit reliability; read-only storage; signal processing; cutting-edge flash memory products; error control coding; high density flash memory; memory cell reliability; memory product area; read-write operations; semiconductor memory industries; signal processing; Decoding; Encoding; Error correction codes; Flash memory; Modulation; Reliability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems (ISCAS), 2012 IEEE International Symposium on
  • Conference_Location
    Seoul
  • ISSN
    0271-4302
  • Print_ISBN
    978-1-4673-0218-0
  • Type

    conf

  • DOI
    10.1109/ISCAS.2012.6272049
  • Filename
    6272049