Title :
Error control coding and signal processing for flash memories
Author :
Shin, Beomkyu ; Seol, Changkyu ; Chung, Jung-Soo ; Kong, Jun Jin
Author_Institution :
Memory Bus., Samsung Electron., Hwaseong, South Korea
Abstract :
With the rapid advances in the area of memory product, it has become more and more important to maintain its reliability while increasing the density and speed performance. Particularly, flash memory products have inherent difficulties in lengthening the limited lifetime due to the degradation of memory cell reliability caused by repeated read and/or write operations. To increase the benefits of high density flash memory, more advanced techniques such as multi-leveling the cell and signal processing has been adopted to the flash memory products. In this paper, arising challenges that leading engineers in semiconductor memory industries have confronted will be shared to further develop cutting-edge flash memory products.
Keywords :
coding errors; flash memories; integrated circuit reliability; read-only storage; signal processing; cutting-edge flash memory products; error control coding; high density flash memory; memory cell reliability; memory product area; read-write operations; semiconductor memory industries; signal processing; Decoding; Encoding; Error correction codes; Flash memory; Modulation; Reliability;
Conference_Titel :
Circuits and Systems (ISCAS), 2012 IEEE International Symposium on
Conference_Location :
Seoul
Print_ISBN :
978-1-4673-0218-0
DOI :
10.1109/ISCAS.2012.6272049