DocumentCode
3025061
Title
Influence of optical power on thermal resistance measurement for high power infrared emitter
Author
Chin-Peng Ching ; Devarajan, Mutharasu
Author_Institution
Nano Optoelectron. Res. (NOR) Lab., Univ. Sains Malaysia, Minden, Malaysia
fYear
2012
fDate
19-21 Sept. 2012
Firstpage
384
Lastpage
387
Abstract
This work signifies the importance of optical power in determining the real thermal resistance value for high power infrared (IR) emitter. Thermal transient measurement and optical test have been employed to study the influence of optical power on thermal resistance determination. For measurement, the IR emitter is driven at constant current of 1.0A with ambient temperature of 24.6oC under still air condition. From the findings, real junction-to-board thermal resistance RthJBR obtained from the structure function with optical power consideration is 7.52±0.01 K/W. However, the electrical junction-to-board thermal resistance RthJBE value (4.87±0.01 K/W) is much lower when optical power is not taken into consideration. It is found that structure function considering optical power offers higher values of real thermal resistance compared to that without optical power consideration.
Keywords
thermal resistance measurement; current 1 A; electrical junction-to-board thermal resistance; high power infrared emitter; optical power; temperature 24.6 C; thermal resistance measurement; thermal transient measurement; Electrical resistance measurement; Junctions; Light emitting diodes; Optical variables measurement; Stimulated emission; Thermal resistance; Thermal transient measurement; high power infrared emitter; optical power; real junction-to-board thermal resistance; structure function;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Electronics (ICSE), 2012 10th IEEE International Conference on
Conference_Location
Kuala Lumpur
Print_ISBN
978-1-4673-2395-6
Electronic_ISBN
978-1-4673-2394-9
Type
conf
DOI
10.1109/SMElec.2012.6417167
Filename
6417167
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