Improved dead time response for Si Avalanche Photodiode

An improved model in defining the dead time (t_D) response for Silicon Avalanche Photodiode (Si APD) is presented in this paper. The generation of a mathematical model for Si APD is used to characterize the performance of passively quenched Si APD. For this purpose, quenching time (tq) and recharging time (tr) models are implemented to obtain t_D less than 50 ns. Therefore, the value of quenching resistor (R_L) should be minimized to reduce the recharge duration of time constant R_LC. By concerning various values of R_L and the influence of parasitic capacitance (C), tr and tq are analyzed in defining t_D for Si APD, which is working in Geiger´s mode.