DocumentCode :
3025363
Title :
Fabrication of Single Crystal Silicon Nanowire Bridge
Author :
Park, Kyung Tea ; Kim, Hyeon Cheol ; Chun, Kukjin
Author_Institution :
Electr. Eng., Seoul Nat. Univ., Seoul, South Korea
fYear :
2010
fDate :
18-25 July 2010
Firstpage :
246
Lastpage :
248
Abstract :
This paper presents the fabrication method of single crystal silicon nanowire, which is easy to control the size and position of nanowire. Therefore it can be used in various sensors like a pressure sensor, a tactile sensor and a microphone. Spacer, which is created by two cycles of Deposition & Etch process, is used as the dry etch mask, and beyond 100 nm nanowire bridges are fabricated. This paper provides the easy way to make sensors using good piezoresistivity of single crystal silicon nanowire. The resistance of nanowire measured as 4.5 MΩ.
Keywords :
electric resistance; elemental semiconductors; etching; nanofabrication; nanosensors; nanowires; piezoresistive devices; semiconductor quantum wires; silicon; Si; dry etch mask; etch process; fabrication method; microphone; nanowire resistance; piezoresistivity; pressure sensor; resistance 4.5 Mohm; single crystal silicon nanowire bridge; spacer; tactile sensor; Bridge circuits; Bridges; Crystals; Fabrication; Lithography; Piezoresistance; Silicon; Piezoresister effect; Piezoresistive Sensors; Silicon Nanowire Bridge; Single Crystal Silicon Nanowire; Spacer lithography;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Sensor Device Technologies and Applications (SENSORDEVICES), 2010 First International Conference on
Conference_Location :
Venice
Print_ISBN :
978-1-4244-7474-5
Type :
conf
DOI :
10.1109/SENSORDEVICES.2010.53
Filename :
5632177
Link To Document :
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