DocumentCode :
3025379
Title :
Combined Emission with simulation technique to resolve unstable failure mode sample
Author :
Diwei Fan ; Wang, W. ; Li Tian ; Miao Wu ; Chunlei Wu
Author_Institution :
Freescale Semicond. (China), Ltd., Tianjin, China
fYear :
2012
fDate :
19-21 Sept. 2012
Firstpage :
444
Lastpage :
447
Abstract :
Failure analysis (FA) of semiconductor should base on a specific failure mode. But the failure mode has potential risk that it may change due to it is unstable (caused by weak defect or voltage stress etc). The change of unstable failure mode can occur in every stage of FA flow. If the change happens, typical FA flow cannot be continued base on the failure mode any more. The change of unstable failure mode in different stage will impact the final FA result deeply. In this situation, combined failed device simulation with emission result is a good choice to resolve unstable failure mode sample. This paper introduces the solution that combined Emission technique with simulation to resolve the unstable failure mode sample.
Keywords :
failure analysis; semiconductor device reliability; FA flow; combined emission with simulation technique; combined failed device simulation; semiconductor failure analysis; unstable failure mode sample; Failure analysis; MOS devices; Microscopy; Scattering; Simulation; Stress; Voltage measurement; Emission; Failure analysis; Failure mode; failed device simulation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Electronics (ICSE), 2012 10th IEEE International Conference on
Conference_Location :
Kuala Lumpur
Print_ISBN :
978-1-4673-2395-6
Electronic_ISBN :
978-1-4673-2394-9
Type :
conf
DOI :
10.1109/SMElec.2012.6417182
Filename :
6417182
Link To Document :
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