• DocumentCode
    3025379
  • Title

    Combined Emission with simulation technique to resolve unstable failure mode sample

  • Author

    Diwei Fan ; Wang, W. ; Li Tian ; Miao Wu ; Chunlei Wu

  • Author_Institution
    Freescale Semicond. (China), Ltd., Tianjin, China
  • fYear
    2012
  • fDate
    19-21 Sept. 2012
  • Firstpage
    444
  • Lastpage
    447
  • Abstract
    Failure analysis (FA) of semiconductor should base on a specific failure mode. But the failure mode has potential risk that it may change due to it is unstable (caused by weak defect or voltage stress etc). The change of unstable failure mode can occur in every stage of FA flow. If the change happens, typical FA flow cannot be continued base on the failure mode any more. The change of unstable failure mode in different stage will impact the final FA result deeply. In this situation, combined failed device simulation with emission result is a good choice to resolve unstable failure mode sample. This paper introduces the solution that combined Emission technique with simulation to resolve the unstable failure mode sample.
  • Keywords
    failure analysis; semiconductor device reliability; FA flow; combined emission with simulation technique; combined failed device simulation; semiconductor failure analysis; unstable failure mode sample; Failure analysis; MOS devices; Microscopy; Scattering; Simulation; Stress; Voltage measurement; Emission; Failure analysis; Failure mode; failed device simulation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Electronics (ICSE), 2012 10th IEEE International Conference on
  • Conference_Location
    Kuala Lumpur
  • Print_ISBN
    978-1-4673-2395-6
  • Electronic_ISBN
    978-1-4673-2394-9
  • Type

    conf

  • DOI
    10.1109/SMElec.2012.6417182
  • Filename
    6417182