DocumentCode :
3025485
Title :
Design of a fully integrated high linearity dual-band CMOS LNA
Author :
Jou, Christina F. ; Cheng, Kuo-Hua ; Huang, Pang-Ruei ; Chen, Mei-Chien
Author_Institution :
Dept. of Commun. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Volume :
3
fYear :
2003
fDate :
14-17 Dec. 2003
Firstpage :
978
Abstract :
A fully-integrated dual-band LNA ( Low Noise Amplifier) with high linearity is presented in this thesis. Designed and implemented in 0.25 μm mixed-signal CMOS process, the LNA simultaneously delivered narrow-band gain and matching at 2.45GHz and 5.25GHz. The LNA exhibits input matching with S11 of -20.48dB at 2.45GHz and -16.6dB at 5.25GHz. And it achieves small-signal gain of 5.78dB and 3.24dB, noise figure 4.7dB and 5.69dB, and IIP3 7dBm and 17dBm.
Keywords :
CMOS analogue integrated circuits; MMIC amplifiers; UHF amplifiers; UHF integrated circuits; field effect MMIC; integrated circuit noise; radio receivers; 2.45 GHz; 5.25 GHz; dual-band receiver; fully-integrated dual-band LNA; high linearity LNA; input matching; mixed-signal CMOS process; narrowband gain; small-signal gain; Bandwidth; CMOS technology; Circuits; Dual band; Impedance matching; Linearity; Oscillators; Radio frequency; Receivers; Transceivers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics, Circuits and Systems, 2003. ICECS 2003. Proceedings of the 2003 10th IEEE International Conference on
Print_ISBN :
0-7803-8163-7
Type :
conf
DOI :
10.1109/ICECS.2003.1301672
Filename :
1301672
Link To Document :
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