Title :
Light Emitting Diodes with Extremely High Extraction-Efficiency for Electroluminescence Refrigeration
Author :
Yu, S.Q. ; Rider, N. ; Ding, D. ; Wang, J.-B. ; Johnson, S.R. ; Zhang, Y.H.
Author_Institution :
Arizona State Univ., Tempe
Abstract :
InGaAs light emitting diodes with extremely high light extraction efficiency are fabricated by monolithically integrating the light emitting region with a suspended GaAs hemispherical lens. This design is being developed for electroluminescence refrigeration applications.
Keywords :
III-V semiconductors; electroluminescence; electroluminescent devices; gallium arsenide; indium compounds; light emitting diodes; InGaAs; electroluminescence refrigeration; light emitting diodes; suspended hemispherical lens; Electroluminescence; Etching; Fabrication; Gallium arsenide; Indium gallium arsenide; Lenses; Light emitting diodes; Luminescence; Refrigeration; Substrates;
Conference_Titel :
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-834-6
DOI :
10.1109/CLEO.2007.4453668
