Title :
Structural and optical characterization of InP/InGaAsP distributed Bragg reflectors grown by CBE
Author :
Behrend, J. ; Rudra, A. ; Sagalowicz, L. ; Berseth, C.-A. ; Carlin, J.-F. ; Schoenberg, A. ; Jouneau, P.-H. ; Kapon, E.
Author_Institution :
Inst. de Micro- et Optoelectron., Ecole Polytech. Federale de Lausanne, Switzerland
Abstract :
High quality InP/InGaAsP Distributed Bragg Reflectors (DBRs) are a key element in Vertical Cavity Surface Emitting Lasers (VCSELs) for long wavelength (1.55 μm) applications. Because of the small index difference between InP and InGaAsP, more than 30 periods are needed to obtain reflectivities above 99%, which makes the crystal growth technique challenging. In this paper, we present the structural and optical characteristics of such DBRs grown by Chemical Beam Epitaxy (CBE) at high growth rates that comply with the requirements for integration in long wavelength VCSELs
Keywords :
III-V semiconductors; X-ray diffraction; atomic force microscopy; chemical beam epitaxial growth; distributed Bragg reflector lasers; gallium arsenide; indium compounds; integrated optics; laser mirrors; quantum well lasers; reflectivity; scanning electron microscopy; semiconductor growth; surface emitting lasers; 1.55 mum; AFM; CBE growth; InP-InGaAsP; InP/InGaAsP distributed Bragg reflectors; TEM; VCSELs; XRD; integration requirements; long wavelength applications; optical characterization; reflectivity mapping; structural characterization; Chemicals; Distributed Bragg reflectors; Indium phosphide; Integrated optics; Optical surface waves; Reflectivity; Stimulated emission; Surface emitting lasers; Surface waves; Vertical cavity surface emitting lasers;
Conference_Titel :
Indium Phosphide and Related Materials, 1997., International Conference on
Conference_Location :
Cape Cod, MA
Print_ISBN :
0-7803-3898-7
DOI :
10.1109/ICIPRM.1997.600185
