Title :
Modeling laterally-contacted nipi-diode radioisotope batteries
Author :
Cress, Cory D. ; Landi, Brian J. ; Raffaelle, Ryne P.
Author_Institution :
Rochester Inst. of Technol., Rochester, NY
Abstract :
A framework for modeling the power generation of laterally-contacted n-type / intrinsic / p-type / intrinsic (nipi) diodes coupled with an alpha-particle radioisotope source is developed. The framework consists of two main parts, the alpha-particle energy deposition profile (ADEP) and a lumped parameter equivalent circuit model describing the nipi device operation. Experimental measurements are used to verify the ADEP modeling approach which determines the spatially varying energy deposited within the device. Using these results, nipi-diode radioisotope batteries are simulated and the affects of the number of junctions, the thickness of the junction, and the alpha-particle flux on output voltage and power are investigated. The modeling results indicate that a 1 cm2 bi-layer device (consisting of one source and two adjacent nipi-diodes) with a source activity of 300 mCi can reach a power output of 2 mW.
Keywords :
III-V semiconductors; alpha-particle sources; cells (electric); equivalent circuits; indium compounds; semiconductor device models; semiconductor diodes; InGaP; alpha-particle particle energy deposition profile; alpha-particle radioisotope source; direct conversion radioisotope batteries; displacement damage dose profile; laterally-contacted nipi-diode; lumped parameter equivalent circuit model; nipi-diode radioisotope batteries; photovoltaic cells; photovoltaic energy harvesting systems; Absorption; Batteries; Circuit simulation; Equivalent circuits; Isotopes; Photovoltaic systems; Radioactive materials; Semiconductor diodes; Solar power generation; Voltage; InGaP Photovoltaic; Micropower Devices; NIEL; Radioisotope Batteries; SRIM; displacement damage dose profile;
Conference_Titel :
Systems, Applications and Technology Conference, 2008 IEEE Long Island
Conference_Location :
Farmingdale, NY
Print_ISBN :
978-1-4244-1731-5
Electronic_ISBN :
978-1-4244-1732-2
DOI :
10.1109/LISAT.2008.4638957