Title :
20.7% highest efficiency large area (100.5 cm2) HITTM cell
Author :
Sakata, Hitoshi ; Nakai, Takuo ; Baba, Toshiaki ; Taguchi, Mikio ; Tsuge, Sadaji ; Uchihashi, Kenji ; Kiyama, Seiichi
Author_Institution :
New Mater. Res. Center, Sanyo Electr. Co. Ltd., Osaka, Japan
Abstract :
A world record total area conversion efficiency of 20.7% and high open circuit voltage (VOC) of 719 mV were achieved on a solar cell with HIT (heterojunction with intrinsic thin-layer) structures on both sides (wafer size: 100.5 cm2, n-type solar-grade CZ-Si). This solar cell was fabricated with the same process as that used in our mass-production lines. The essence of this high performance is derived from the excellent passivation ability of the HIT structure on c-Si. This report discusses research for excess of 20% efficiency HIT cell (~100 cm2), focusing on the a-Si passivation effect estimated from the carrier lifetime, and describes product development for the industrialization of HIT cells
Keywords :
carrier lifetime; elemental semiconductors; p-n heterojunctions; passivation; silicon; solar cells; 20.7 percent; 719 mV; HIT structure solar cell; a-Si passivation effect; carrier lifetime; conversion efficiency; heterojunction with intrinsic thin-layer structure; high open circuit voltage; n-type solar-grade CZ-Si; passivation ability; Charge carrier lifetime; Circuits; Heterojunctions; Life estimation; Passivation; Photovoltaic cells; Plasma temperature; Silicon; Thermal stresses; Voltage;
Conference_Titel :
Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE
Conference_Location :
Anchorage, AK
Print_ISBN :
0-7803-5772-8
DOI :
10.1109/PVSC.2000.915742
