A 5 GHz low noise amplifier on 0.35 μm BiCMOS SiGe

Author

Plessas, Fotis ; Kalivas, Grigorios

Author_Institution

Dept. of Electr. & Comput. Eng., Patras Univ., Greece

Volume

3

fYear

2003

fDate

14-17 Dec. 2003

Firstpage

1082

Abstract

The Low Noise Amplifier (LNA) presented in this work offers a gain of 20 dB, a noise figure of 1.6 dB, with an input referred third-order intercept point of -4.5 dBm and a 1 dB compression point of -16 dBm at 5.2 GHz, using 0.35 μm BiCMOS SiGe. It operates on 5 V and requires 10 mA. The output and the input of the amplifier are matched internally to 50 Ω. The amplifier includes an image reject filter, an adaptive bias network, an RLC tank and input/output balun transformers. The image reject filter attenuates the image signal by providing low impedance at that frequency and is tuned by voltage control. An adaptive bias network is used, which allows the user to select the bias current in an adaptive manner, depending upon the requirements of the individual system (low NF, high gain, low consumption etc.).

Keywords

BiCMOS analogue integrated circuits; Ge-Si alloys; MMIC amplifiers; circuit simulation; differential amplifiers; 5 GHz; BiCMOS technology; RLC tank; SiGe; adaptive bias network; balun transformers; bipolar amplifier; differential cascode topology; image reject filter; low noise amplifier; single-ended cascode amplifier; voltage control; Adaptive filters; Adaptive systems; BiCMOS integrated circuits; Gain; Germanium silicon alloys; Image coding; Impedance matching; Low-noise amplifiers; Noise figure; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Circuits and Systems, 2003. ICECS 2003. Proceedings of the 2003 10th IEEE International Conference on

Print_ISBN

0-7803-8163-7

Type

conf

DOI

10.1109/ICECS.2003.1301698

Filename

1301698