Design of a 0.25-μm CMOS 5.25GHz transceiver front-end

Author

Jou, Christina F. ; Huang, Pang-Ruei ; Cheng, Kuo-Hua

Author_Institution

Dept. of Commun. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

3

fYear

2003

fDate

14-17 Dec. 2003

Firstpage

1090

Abstract

This paper describes the design consideration and simulation performance for a fully integrated CMOS RF front-end for 5.25GHz application. The single chip frontend circuit consists: a 2.65dB insertion loss transmit/receive switch (T/R switch), a 13dB power gain, 2.9dB NF low noise amplifier (LNA), and a 15dBm P_out-1dB power amplifier (PA). The IC has fabricated in a TSMC 0.25-μm CMOS technology. To achieve single chip design target, this chip was designed without any off-chip matching component. The front-end circuit was designed for two operation modes: transmission mode (TX) and receiving mode (RX). We can switch two operation modes by changing the control voltage of the T/R switch. The simulation results of the TX mode has the power gain 7.27dB and the P_out-1dB is 12dBm. The RX mode power gain is 9.64dB and the IIP3 is 1.1dBm.

Keywords

CMOS analogue integrated circuits; MMIC power amplifiers; S-parameters; circuit simulation; field effect MMIC; transceivers; 13 dB; 5.25 GHz; CMOS transceiver front-end; S-parameters simulation; design consideration; fully integrated RF front-end; insertion loss transmit/receive switch; low noise amplifier; power amplifier; receiving mode; simulation performance; single chip circuit; transmission mode; CMOS technology; Circuit simulation; Insertion loss; Low-noise amplifiers; Propagation losses; Radio frequency; Radiofrequency amplifiers; Switches; Switching circuits; Transceivers;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Circuits and Systems, 2003. ICECS 2003. Proceedings of the 2003 10th IEEE International Conference on

Print_ISBN

0-7803-8163-7

Type

conf

DOI

10.1109/ICECS.2003.1301700

Filename

1301700