Title :
Fabrication of Cu2ZnSnS4 thin film solar cells by the spin coating technique
Author :
Olopade, M.A. ; Awe, O.E. ; Awobode, A.M. ; Oberafo, A. ; Kana, M.G.Z.
Author_Institution :
Dept. of Phys., Univ. of Lagos, Lagos, Nigeria
Abstract :
This study presents a novel investigation on thin film Cu2ZnSnS4 (CZTS) solar cells in the superstrate structure in which all the semiconductor layers were prepared under non-vacuum conditions. The solar cell structure (SLG)/FTO (Fluorine doped Tin-Oxide)/Ag/CdS/CZTS/Al had the SnO2:F (window), CdS (buffer) and CZTS (absorber) layers deposited by APCVD, Sol-gel and Sol-gel sulphurizing methods respectively. Each of the layers of the solar cells was first optimized before fabricating the solar cells. As a result of our investigations, the most efficient solar cell showed an open circuit voltage of 230mV, a short circuit current density of 4.40mA/cm2, a fill factor of 0.277 and a conversion efficiency of 0.28%.
Keywords :
II-VI semiconductors; aluminium; cadmium compounds; copper compounds; fluorine; plasma CVD; semiconductor thin films; short-circuit currents; silver; sol-gel processing; solar cells; spin coating; tin compounds; zinc compounds; APCVD; Ag-CdS-Al; Cu2ZnSnS4; SLG-FTO; SnO2:F; efficiency 0.28 percent; nonvacuum conditions; semiconductor layers; short circuit current density; sol-gel sulphurizing methods; spin coating technique; superstrate structure; thin film solar cell fabrication; voltage 230 mV; Ethanol; Optical films; Photovoltaic cells; Physics; Substrates; Sol-gel preparation; Spin coating; Superstrate; Thin films;
Conference_Titel :
Semiconductor Electronics (ICSE), 2012 10th IEEE International Conference on
Conference_Location :
Kuala Lumpur
Print_ISBN :
978-1-4673-2395-6
Electronic_ISBN :
978-1-4673-2394-9
DOI :
10.1109/SMElec.2012.6417234
