Design and characterization of bandgap voltage reference

Author

Yusoff, Yuzman ; Che Lah, Hanif ; Razali, Noraini ; Harun, S.N. ; Tan Kong Yew

Author_Institution

Integrated Circuit Dev., MIMOS Berhad, Kuala Lumpur, Malaysia

fYear

2012

fDate

19-21 Sept. 2012

Firstpage

686

Lastpage

689

Abstract

This paper presents the design and characterization of 1.8V bandgap voltage reference fabricated using Siltera´s 0.18um CMOS process technology. The proposed bandgap voltage reference employed two-stage amplifier, start-up and power down circuit. The paper focuses on circuit analysis using SPECTRE and Monte Carlo, layout design technique for reducing mismatch and silicon characterization. The result shows the designed bandgap voltage reference generates a stable voltage reference at 1.204V with average temperature coefficient of 6.5ppm/^oC. The power dissipation for this bandgap voltage reference is 150uW under 1.8V supply voltage and it occupies silicon area of 370um×300um.

Keywords

CMOS analogue integrated circuits; Monte Carlo methods; amplifiers; energy gap; integrated circuit layout; Monte Carlo technique; SPECTRE; Siltera CMOS process technology; bandgap voltage reference; circuit analysis; layout design technique; power 150 muW; power dissipation; power down circuit; size 0.18 mum; start-up circuit; two-stage amplifier; voltage 1.204 V; voltage 1.8 V; Layout; Operational amplifiers; Photonic band gap; Resistors; Temperature dependence; Temperature measurement; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Electronics (ICSE), 2012 10th IEEE International Conference on

Conference_Location

Kuala Lumpur

Print_ISBN

978-1-4673-2395-6

Electronic_ISBN

978-1-4673-2394-9

Type

conf

DOI

10.1109/SMElec.2012.6417236

Filename

6417236