Industrial Screen-Printed n-Type Rear-Junction Solar Cells With 20.6% Efficiency

Screen-printed high-efficiency industrial n-type rear-junction silicon solar cells were fabricated on 5-in commercial grade Cz wafers. A furnace-diffused boron emitter and a laser-doped phosphorous front-surface field were applied to produce n-type rear-junction cells with PECVD SiNx on the front and PECVD AlO x/SiNx on the back for surface passivation. All contacts were screen printed. An average efficiency of 20.33% was achieved, while the best efficiency was 20.65%. The initial results indicate that the potential for a higher FF can be achieved by improving the front pattern and optimizing the condition for metallization, enabling an even higher efficiency.