Industrial Screen-Printed n-Type Rear-Junction Solar Cells With 20.6% Efficiency

Author

Wei Wang ; Jian Sheng ; Shengzhao Yuan ; Yun Sheng ; Wenhao Cai ; Yifeng Chen ; Chun Zhang ; Zhiqiang Feng ; Verlinden, Pierre J.

Author_Institution

State Key Lab. of PV Sci. & Technol., Trina Solar, Changzhou, China

Volume

5

Issue

4

fYear

2015

fDate

Jul-15

Firstpage

1245

Lastpage

1249

Abstract

Screen-printed high-efficiency industrial n-type rear-junction silicon solar cells were fabricated on 5-in commercial grade Cz wafers. A furnace-diffused boron emitter and a laser-doped phosphorous front-surface field were applied to produce n-type rear-junction cells with PECVD SiNx on the front and PECVD AlO x/SiNx on the back for surface passivation. All contacts were screen printed. An average efficiency of 20.33% was achieved, while the best efficiency was 20.65%. The initial results indicate that the potential for a higher FF can be achieved by improving the front pattern and optimizing the condition for metallization, enabling an even higher efficiency.

Keywords

aluminium compounds; elemental semiconductors; passivation; plasma CVD; semiconductor device metallisation; silicon; silicon compounds; solar cells; AlO_x-SiN_x; PECVD; Si; furnace-diffused boron emitter; industrial screen-printed n-type rear-junction solar cells; laser-doped phosphorous front-surface field; metallization; surface passivation; Conductivity; Doping; Photovoltaic cells; Silicon; Surface emitting lasers; Surface resistance; N-type; rear junction; screen-printed solar cells; silicon;

fLanguage

English

Journal_Title

Photovoltaics, IEEE Journal of

Publisher

ieee

ISSN

2156-3381

Type

jour

DOI

10.1109/JPHOTOV.2015.2416919

Filename

7087347