Title :
Effect of annealing duration on the memristive behavior of Pt/TiO2/ITO memristive device
Author :
Kamarozaman, Nur Syahirah ; Aznilinda, Z. ; Herman, Sukreen Hana ; Bakar, Rohani Abu ; Rusop, M.
Author_Institution :
NANO-Electron. Centre (NET), Univ. Teknol. Mara (UiTM), Shah Alam, Malaysia
Abstract :
A titanium dioxide (TiO2) based memristive device was fabricated and investigated for its memristive behavior. In this paper, the effect of annealing duration on the memristive behavior of device was studied. TiO2 thin films were deposited on ITO substrate using RF magnetron sputtering method and then annealed in nitrogen at 450°C for 10, 30 and 60min. Characterization of current-voltage (I-V) measurement and surface morphology using scanning electron microscopy (FESEM) between annealed and nonannealed samples were investigated. From the result, it shows that sample annealed at 450°C for 60min resulted in switching loop with high conductivity when negative bias is applied probably due to the presence of high oxygen vacancies.
Keywords :
annealing; electric current measurement; indium compounds; memristors; platinum; scanning electron microscopy; sputtering; surface morphology; tin compounds; titanium compounds; voltage measurement; FESEM; I-V measurement; Pt-TiO2-ITO; RF magnetron sputtering method; annealing duration; current-voltage measurement; memristive behavior; memristive device; negative bias; scanning electron microscopy; surface morphology; switching loop; temperature 450 degC; thin films; time 10 min; time 30 min; time 60 min; Annealing; Current measurement; Electrodes; Indium tin oxide; Memristors; Surface morphology; Switches; RF-magnetron sputtering method; Titanium dioxide; annealing; memristor;
Conference_Titel :
Semiconductor Electronics (ICSE), 2012 10th IEEE International Conference on
Conference_Location :
Kuala Lumpur
Print_ISBN :
978-1-4673-2395-6
Electronic_ISBN :
978-1-4673-2394-9
DOI :
10.1109/SMElec.2012.6417240
