Thermoelectric properties and devices of p-type Bi0.4Sb1.6Se2.4Te0.6 and n-type Bi2Se0.6Te2.4 prepared by solid state microwave synthesis

This study reports on the fabrication of a chalcogen-based thermoelectric power generation (TEG) device using p-type Bi_0.4Sb_1.6Se_2.4Te_0.6 and n-type Bi₂Se_0.6Te_2.4 legs. Electrical power generation characteristics were monitored by changing both the temperature conditions and the number of p-n couples required to generate maximum power. The significance of the resistances, including the internal resistance (R_in) and contact resistance (R_c) between legs and electrodes, are discussed. The maximum open circuit voltage (V_oc) and output power (P_max) obtained with the 18 p-n couples device were 1480.5 mV and 273.2 mW, respectively, under the thermal condition of T_H=523 K hot-side temperature and ΔT = 184 K temperature difference.