DocumentCode :
3026883
Title :
Back contact buried contact solar cells with metallization wrap around electrodes
Author :
Jooss, W. ; Knauss, H. ; Huster, F. ; Fath, P. ; Bucher, E. ; Tölle, R. ; Bruton, T.M.
Author_Institution :
Fakultat fur Phys., Konstanz Univ., Germany
fYear :
2000
fDate :
2000
Firstpage :
176
Lastpage :
179
Abstract :
The authors present results on back contact buried contact solar cells based on the metallization wrap around (MWA) concept. In this cell design, the current is conducted over metallized edges of the solar cell to the rear side busbar. The applied processing sequence is almost identical to the one of conventional buried contact cells and is based on p/n-contact isolation by mechanical abrasion. One major problem of MWA solar cells seems to be the long current paths in the fingers to the collecting busbar on the rear side. Therefore device simulations were carried out in order to find the optimum grid design for different cell sizes (10×10 cm2 and 12.5×12.5 cm2). The device simulations showed that the MWA solar cell concept leads to higher efficiencies as compared to conventional cells. Best efficiencies obtained in this study are η=17.5% (cell area 25 cm2) and η=16.6% (100 cm2) on Cz-Si. For mc-Si efficiencies of η=15.7% (25 cm2) and η=14.4% (100 cm2) were reached
Keywords :
abrasion; electrical contacts; elemental semiconductors; metallisation; p-n junctions; semiconductor device measurement; semiconductor device models; semiconductor device testing; silicon; solar cells; 10 cm; 12.5 cm; 14.4 percent; 15.7 percent; 16.6 percent; 17.5 percent; Si; back contact buried contact Si solar cells; current paths; device simulations; mechanical abrasion; metallization wrap around electrodes; metallized edges; optimum grid design; p/n-contact isolation; processing sequence; rear side busbar; Coatings; Contacts; Electrodes; Fingers; Metallization; Passivation; Photovoltaic cells; Physics; Production; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE
Conference_Location :
Anchorage, AK
ISSN :
0160-8371
Print_ISBN :
0-7803-5772-8
Type :
conf
DOI :
10.1109/PVSC.2000.915783
Filename :
915783
Link To Document :
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