DocumentCode
3026883
Title
Back contact buried contact solar cells with metallization wrap around electrodes
Author
Jooss, W. ; Knauss, H. ; Huster, F. ; Fath, P. ; Bucher, E. ; Tölle, R. ; Bruton, T.M.
Author_Institution
Fakultat fur Phys., Konstanz Univ., Germany
fYear
2000
fDate
2000
Firstpage
176
Lastpage
179
Abstract
The authors present results on back contact buried contact solar cells based on the metallization wrap around (MWA) concept. In this cell design, the current is conducted over metallized edges of the solar cell to the rear side busbar. The applied processing sequence is almost identical to the one of conventional buried contact cells and is based on p/n-contact isolation by mechanical abrasion. One major problem of MWA solar cells seems to be the long current paths in the fingers to the collecting busbar on the rear side. Therefore device simulations were carried out in order to find the optimum grid design for different cell sizes (10×10 cm2 and 12.5×12.5 cm2). The device simulations showed that the MWA solar cell concept leads to higher efficiencies as compared to conventional cells. Best efficiencies obtained in this study are η=17.5% (cell area 25 cm2) and η=16.6% (100 cm2) on Cz-Si. For mc-Si efficiencies of η=15.7% (25 cm2) and η=14.4% (100 cm2) were reached
Keywords
abrasion; electrical contacts; elemental semiconductors; metallisation; p-n junctions; semiconductor device measurement; semiconductor device models; semiconductor device testing; silicon; solar cells; 10 cm; 12.5 cm; 14.4 percent; 15.7 percent; 16.6 percent; 17.5 percent; Si; back contact buried contact Si solar cells; current paths; device simulations; mechanical abrasion; metallization wrap around electrodes; metallized edges; optimum grid design; p/n-contact isolation; processing sequence; rear side busbar; Coatings; Contacts; Electrodes; Fingers; Metallization; Passivation; Photovoltaic cells; Physics; Production; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE
Conference_Location
Anchorage, AK
ISSN
0160-8371
Print_ISBN
0-7803-5772-8
Type
conf
DOI
10.1109/PVSC.2000.915783
Filename
915783
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