Fabrication and characterization of IDE ZnO thin films using sol-gel method for PBS solution measurement

Microelectronics technologies have contributed a lot of facilities to fabricate small scale devices. With the enhancement of microelectronics technologies, IDE in micro-gap size is successfully fabricated on the SiO₂/Si substrate. In this paper, ZnO thin films, which were prepared using low-cost sol-gel method, were coated on the IDE device. As to study the influence of different solvent to the morphology, particles size and quality of the ZnO thin films, two types of solvent had been chosen, namely ethanol and methanol. For the study of morphology, grain size and uniformity distribution of the ZnO on the substrate, AFM had been chosen. XRD result shows that all annealed polycrystalline ZnO thin film exhibit highly crystalline hexagonal wurtzite structure. The optical characteristic of the ZnO thin films had been determined using UV-Vis spectroscopy. The capacitance and conductance of the device at certain frequency had been conducted using dielectrical analyzer. The influence of PBS solution on the IDE ZnO device had been studied using dielectrical analyzer.