DocumentCode :
3026906
Title :
Prospects for high efficiency silicon solar cells in thin Czochralski wafers using industrial processes
Author :
Bruton, T.M. ; Roberts, S. ; Heasman, K.C. ; Russell, R. ; Warta, W. ; Glunz, S.W. ; Dicker, J. ; Knobloch, J.
Author_Institution :
BP Solarex, Sunbury on Thames, UK
fYear :
2000
fDate :
2000
Firstpage :
180
Lastpage :
183
Abstract :
Lower PV systems cost can be achieved if less silicon material is used in modules and if higher solar cell efficiencies can be achieved cost effectively. In this study the efficiency limits of mass production high efficiency laser grooved buried grid solar cells have been modelled for thinner and thinner wafers. PC1D modelling has been coupled with a 3D ray tracing simulation RAYN to predict cells performance. Given suitable surface passivation, light trapping and minority carrier lifetime, solar cell efficiency can actually increase with decreasing wafer thickness. Cells were made by the RP-PERC process, using thinned industrial grade Czochralski silicon wafers. Cells (4cm2) of over 20% efficiency were fabricated in wafers with a final thickness of 115 μm. Standard production LGBG cells had poor BSFs but on process optimisation nearly 17% efficiency were made in 140 μm micron wafers on an industrial production line
Keywords :
carrier lifetime; electrical engineering computing; elemental semiconductors; minority carriers; passivation; ray tracing; silicon; solar cells; 115 mum; 14.6 to 20.2 percent; 140 mum; PC1D modelling; PV systems cost; RAYN 3D ray tracing simulation; RP-PERC process; Si; cell performance simulation; high efficiency; high efficiency silicon solar cells; industrial processes; laser grooved buried grid solar cells; light trapping; mass production; minority carrier lifetime; process optimisation; surface passivation; thin Czochralski wafers; thinned industrial grade Czochralski silicon wafers; Costs; Laser modes; Mass production; Optical materials; Passivation; Photovoltaic cells; Predictive models; Ray tracing; Semiconductor device modeling; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE
Conference_Location :
Anchorage, AK
ISSN :
0160-8371
Print_ISBN :
0-7803-5772-8
Type :
conf
DOI :
10.1109/PVSC.2000.915784
Filename :
915784
Link To Document :
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