Surface defect on SiC ohmic contact during thermal annealing

Capability and reliability of Silicon Carbide (SiC) material for semiconductor power devices are influence by surface defects. 4H-SiC have been measured to investigate the surface defect on 4H-SiC epitaxial in order to obtain the defects information related to electrical performances. Ohmic contact was prepared using Aluminium and Platinum with thickness 90 nm and 150 nm respectively and annealed at 400 °C at three various time. Surface morphology was observed using both surface profile technique and Scanning Electron Microscope (SEM) prior to ohmic deposition surface. The mapping defect studies of 4H-SiC surface have revealed that the large area of micropipes and shallow pit will exposed defects exist.