Title :
Gas source MBE growth of TlInGaP and TlInGaAs as new materials for long-wavelength applications
Author :
Asahi, H. ; Fushida, M. ; Koh, H. ; Yamamoto, K. ; Asami, K. ; Gonda, S. ; Oe, K.
Author_Institution :
Inst. of Sci. & Ind. Res., Osaka Univ., Japan
Abstract :
The gas source MBE grown layers exhibited (2×4) surface reconstruction. X-ray diffraction measurements showed the successful growth of TlInP, TlGaP, TlInGaP and TlInAs. No phase separation was observed in TlInP and TlInGaP grown on InP substrates and TlInAs on InAs, while phase separation was observed in TlGaP grown on GaAs. PL emission was observed for TllnP and TlInGaP grown on InP. The layers showed n-type conduction with an electron concentration of 6.3×10 15 (3.9×1015) cm-3 and an electron mobility of 2,500 (22,000) cm2/V.s at room temperature (77 K) for TlInP with a Tl composition of 5%. Photocurrent versus wavelength measurements showed a decrease of band gap energy by the addition of Tl and that its temperature variation is smaller than that of InAs, indicating the possibility of temperature independent band gap energy in these alloy semiconductors
Keywords :
III-V semiconductors; X-ray diffraction; chemical beam epitaxial growth; electron density; electron mobility; energy gap; gallium compounds; indium compounds; optical materials; photoconductivity; photoluminescence; semiconductor epitaxial layers; semiconductor growth; surface reconstruction; thallium compounds; (2×4) surface reconstruction; 2 to 10 mum; 77 to 300 K; GaAs; InAs; InP; InP substrates; PL emission; TlGaP; TlInAs; TlInGaAs; TlInGaP; TlInP; X-ray diffraction measurements; band gap energy; electron concentration; electron mobility; gas source MBE growth; long-wavelength applications; n-type conduction; phase separation; photocurrent versus wavelength measurements; room temperature; Electron mobility; Gallium arsenide; Indium phosphide; Photoconductivity; Photonic band gap; Substrates; Surface reconstruction; Temperature; Wavelength measurement; X-ray diffraction;
Conference_Titel :
Indium Phosphide and Related Materials, 1997., International Conference on
Conference_Location :
Cape Cod, MA
Print_ISBN :
0-7803-3898-7
DOI :
10.1109/ICIPRM.1997.600190
