Title :
Influence of post deposition annealing temperatures on electrical properties of Al2O3/InSb MOSCAPs
Author :
Hai-Dang Trinh ; Yue-Chin Lin ; Chang, Edward Yi ; Hong-Quan Nguyen ; Shin-Yuan Wang ; Yuen-Yee Wong ; Binh-Tinh Tran ; Quang-Ho Luc ; Chi-Lang Nguyen ; Chang-Fu Dee
Author_Institution :
Dept. of Mater. Sci. & Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
The influence of post deposition annealing (PDA) temperatures on electrical characteristics of Al2O3/InSb metal-oxide-semiconductor capacitor (MOSCAP) structures is investigated. Low frequency C-V responses with strong inversion behavior in the whole range of measured frequency (100 Hz-1 MHz) are observed, indicating very short minority carrier response time in InSb. The PDA temperature of 300°C and above would result in the reduction of maximum capacitance. At the PDA temperature of above 300°C the C-V hysteresis, frequency dispersion and stretch out increases significantly, indicating the degradation of the MOSCAP structures. The degradation might relate to the interdiffusion between Al2O3 and InSb during thermal steps.
Keywords :
III-V semiconductors; MIS structures; MOS capacitors; aluminium compounds; annealing; chemical interdiffusion; indium compounds; minority carriers; Al2O3-InSb; C-V hysteresis; MOSCAP structures; electrical properties; frequency 100 Hz to 1 MHz; frequency dispersion; interdiffusion; low frequency C-V responses; metal-oxide-semiconductor capacitor structures; post deposition annealing temperatures; strong inversion behavior; temperature 300 degC; very short minority carrier response time; Aluminum oxide; Capacitance-voltage characteristics; Degradation; Frequency measurement; Hysteresis; Logic gates; Temperature measurement;
Conference_Titel :
Semiconductor Electronics (ICSE), 2012 10th IEEE International Conference on
Conference_Location :
Kuala Lumpur
Print_ISBN :
978-1-4673-2395-6
Electronic_ISBN :
978-1-4673-2394-9
DOI :
10.1109/SMElec.2012.6417251
