DocumentCode :
3027007
Title :
Nanoindentation creep analysis of gold ball bond
Author :
Zulkifli, M.N. ; Jalar, A. ; Abdullah, Saad ; Othman, Norinsan Kamil ; Hamid, Muhammad Azmi Abd
Author_Institution :
Inst. of Microeng. & Nanoelectronic (IMEN), Univ. Kebangsaan Malaysia, Bangi, Malaysia
fYear :
2012
fDate :
19-21 Sept. 2012
Firstpage :
755
Lastpage :
758
Abstract :
The analysis of indentation creep of gold, Au ball bond was carried out by using nanoindentation approach. 3 × 4 arrays of indentation were indented at three location of Au ball bond namely gold, Au Zone, intermetallic compounds, IMC Zone and Silicon, Si Zone. It was observed that Au and IMC have higher creep behavior compared to that of Si. The responsible indentation creep mechanism for Au and IMC of ball bond that have been subjected 1000 hours of HTS was the dislocation glide. It was noted that the lower plastic deformation or creep effect of IMC was due to the higher hardness value which demonstrated the strain hardening effect compared to that of Au.
Keywords :
creep; elemental semiconductors; gold; nanoindentation; plastic deformation; silicon; slip; work hardening; Au; Au zone; IMC zone; Si; dislocation glide; gold ball bond; high temperature storage; intermetallic compounds; nanoindentation creep analysis; plastic deformation; silicon zone; strain hardening; time 1000 hour; Creep; Gold; High temperature superconductors; Sensitivity; Strain; Stress; Wires;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Electronics (ICSE), 2012 10th IEEE International Conference on
Conference_Location :
Kuala Lumpur
Print_ISBN :
978-1-4673-2395-6
Electronic_ISBN :
978-1-4673-2394-9
Type :
conf
DOI :
10.1109/SMElec.2012.6417253
Filename :
6417253
Link To Document :
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