Fabrication of CuGaO2 films by sol-gel method for UV detector application

Cu-based conductive oxide such as CuGaO₂ is promising for transparent p-type oxide material. In this work, the CuGaO₂ film has been fabricated using liquid-phase sol-gel method. The sol-gel derived CuGaO₂ films showed p-type conductivity, and high transparency with transmittance of about 80% in the visible light region. The energy gap for direct allowed transition was about 3.6 eV. Furthermore, we also investigated the potential application of CuGaO₂ films by measure the drain current in the dark and under a UV light illumination. Upon illumination with UV light, a significant increase in the drain current was observed which indicates that the charge carrier was excited when energy with more than energy gap was applied.