DocumentCode
302717
Title
Dynamic circuits for CMOS and BiCMOS low power VLSI design
Author
Zhu, Zheng ; Carlson, Bradley S.
Author_Institution
Dept. of Electr. Eng., State Univ. of New York, Stony Brook, NY, USA
Volume
4
fYear
1996
fDate
12-15 May 1996
Firstpage
197
Abstract
We present new types of circuits for dynamic logic gates in CMOS and BiCMOS technologies which use a diode to control precharge and predischarge to decrease the output voltage swing. This technique improves both delay and power dissipation compared to conventional dynamic CMOS and BiCMOS logic gates. Analysis indicates an improvement in delay and power of 50% and 26%, respectively for dynamic CMOS and 10% and 26%, respectively for dynamic BiCMOS using Vdd=1.5 V
Keywords
BiCMOS logic circuits; CMOS logic circuits; VLSI; integrated circuit design; logic design; logic gates; 1.5 V; BiCMOS IC; CMOS IC; delay; diode; dynamic circuit; logic gate; low power VLSI design; output voltage swing; power dissipation; precharge control; predischarge; BiCMOS integrated circuits; CMOS logic circuits; CMOS technology; Capacitance; Delay; Diodes; Logic gates; Power dissipation; Very large scale integration; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 1996. ISCAS '96., Connecting the World., 1996 IEEE International Symposium on
Conference_Location
Atlanta, GA
Print_ISBN
0-7803-3073-0
Type
conf
DOI
10.1109/ISCAS.1996.541934
Filename
541934
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