Write/verify free analog non-volatile memory using a neuron-MOS comparator

We have developed an analog non-volatile memory technology for use in a neuron-MOS(νMOS) real-time event recognition system. The new cell structure enables us to monitor the memory cell content continuously during the writing operation, and the writing is automatically terminated when the cell content reaches the pre-determined target value. As a result, the time-consuming write/verify cycles usually required in conventional analog EEPROMs have become no more necessary. New comparator using νMOS is introduced for accurate termination of writing. Fundamental circuit action is experimentally verified by fabricated test circuits. A multiple memory cell configuration is also presented for achieving higher integration density, quick readout, and fast writing