Quasi three-dimensional simulation for thin film polycrystalline silicon solar cells

Author

Ishikawa, Y. ; Yamamoto, Y. ; Hatayama, T. ; Uraoka, Y. ; Fuyuki, T.

Author_Institution

Graduate Sch. of Mater. Sci., Nara Inst. of Sci. & Technol., Japan

fYear

2000

fDate

2000

Firstpage

280

Lastpage

283

Abstract

Optimum designs of cell configuration and polycrystalline silicon (poly-Si) grown by atmospheric pressure chemical vapor deposition (APCVD) have been demonstrated. In order to realize high-efficiency thin film poly-Si solar cells, a novel method of quasi three-dimensional simulation using a cylindrical coordinate system was carried out. Grain boundaries interface recombination velocity based on the simulation should be less than 10³ cm/s. Even at a relatively short diffusion length of L_n=50 μm, high efficiency larger than 16% will be expected at a thickness of 5-20 μm. Poly-Si films with columnar diameter of around 5 μm were successfully deposited on foreign substrates with APCVD at a high growth rate of 0.8 μm/min

Keywords

chemical vapour deposition; elemental semiconductors; grain boundaries; semiconductor device models; semiconductor growth; silicon; solar cells; surface recombination; 5 to 20 mum; APCVD; Si; atmospheric pressure chemical vapor deposition; cell configuration; cylindrical coordinate system; foreign substrates; grain boundaries interface recombination velocity; growth rate; high-efficiency; optimum designs; poly-Si; poly-Si films; quasi three-dimensional simulation; thin film polycrystalline silicon solar cells; Atmospheric modeling; Chemical technology; Grain boundaries; Grain size; Materials science and technology; Photovoltaic cells; Semiconductor thin films; Silicon; Sputtering; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE

Conference_Location

Anchorage, AK

ISSN

0160-8371

Print_ISBN

0-7803-5772-8

Type

conf

DOI

10.1109/PVSC.2000.915813

Filename

915813