Title :
Record cell efficiency on industrial multicrystalline silicon by rapid thermal processing
Author :
Noel, S. ; Debarge, L. ; Monna, R. ; Lautenschlager, H. ; Schindle, R. ; Muller, J.C.
Author_Institution :
Lab. PHASE, CNRS, Strasbourg, France
Abstract :
Simultaneous diffusion of phosphorus and aluminum by rapid thermal processing (RTP) in the order of one minute is used to realize emitter and back surface field in a single high temperature step, with controlled surface concentration of the dopant in order to obtain suitable front surface recombination velocities. Carefully controlling the mentioned parameter on industrial multicrystalline silicon (Polix(R) from Photowatt) lead to 16.7% efficient solar cells on a surface of 25 cm2. All results are discussed in terms of photoconductivity decay and quantum efficiency analysis
Keywords :
aluminium; diffusion; elemental semiconductors; phosphorus; photoconductivity; rapid thermal processing; semiconductor doping; silicon; solar cells; surface recombination; 1 min; 16.7 percent; Photowatt; Polix; Si:P,Al; aluminum diffusion; back surface field; controlled surface concentration; dopant; emitter; front surface recombination velocities; industrial multicrystalline silicon; phosphorus diffusion; photoconductivity decay; quantum efficiency analysis; rapid thermal processing; simultaneous diffusion; single high temperature step; solar cell efficiency; Aluminum; Annealing; Cooling; Heating; Manufacturing industries; Photovoltaic cells; Radiative recombination; Rapid thermal processing; Silicon; Velocity control;
Conference_Titel :
Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE
Conference_Location :
Anchorage, AK
Print_ISBN :
0-7803-5772-8
DOI :
10.1109/PVSC.2000.915832
