DocumentCode
3027909
Title
Plasma surface texturization for multicrystalline silicon solar cells
Author
Schnell, Martin ; Ludemann, Ralf ; Schaefer, Sebastian
Author_Institution
Fraunhofer-Inst. fur Solare Energiesysteme, Freiburg, Germany
fYear
2000
fDate
2000
Firstpage
367
Lastpage
370
Abstract
Textured front surfaces improve the efficiencies of solar cells due to reduced reflection and light trapping. Most methods of wet chemical surface texturing depend on crystal orientation. The authors have therefore developed a SF6/O2 reactive ion etch process for the mask-less texturing of silicon independently from grain orientation. Following the black silicon method, they have optimised a surface texture with a typical lateral dimension in the order of 100 nm and with very good homogeneity. Since the texturing sensitivity depends on the process parameters as well as on the condition of the reactor and the wafer surface, pre-conditioning is a crucial step. The weighted reflection of an optimised process is less than 3% without any additional antireflection coating. However, the texturing enlarges the surface drastically and shallow diffusions result in high sheet resistance. Multicrystalline silicon solar cells with black silicon texturing therefore outperform planar cells, but still suffer from bad short-wavelength response due to high surface recombination and internal resistance
Keywords
elemental semiconductors; plasma materials processing; silicon; solar cells; sputter etching; surface texture; surface treatment; 100 nm; SF6-O2; SF6/O2 reactive ion etch process; Si; mask-less texturing; multicrystalline Si solar cells; plasma surface texturization; pre-conditioning; shallow diffusions; sheet resistance; short-wavelength response; texturing sensitivity; Chemicals; Etching; Optical reflection; Optimization methods; Photovoltaic cells; Plasma applications; Plasma chemistry; Silicon; Surface resistance; Surface texture;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE
Conference_Location
Anchorage, AK
ISSN
0160-8371
Print_ISBN
0-7803-5772-8
Type
conf
DOI
10.1109/PVSC.2000.915841
Filename
915841
Link To Document