Characterization of silicon field effect transistor sub-THz detectors for imaging systems

Author

Földesy, Péter

Author_Institution

Cellular Sensory & Opt. Wave Comput. Lab., Comput. & Autom. Res. Inst., Budapest, Hungary

fYear

2012

fDate

20-23 May 2012

Firstpage

934

Lastpage

937

Abstract

This document reports various aspects of silicon field-effect transistor structures response under high frequency continuous wave and pulsed irradiation. The detectors have been manufactured in standard 0.18 um CMOS technology. Their response show formerly predicted behavior and novel effects. Implementing a pair of non-antenna coupled gate is found to increase the sensitivity. Several structures reveal additional effects like polarity change depending on gate source potential and drain current. A responsivity enhancement technique is presented as well in not noise free realistic setups.

Keywords

CMOS image sensors; MOSFET; elemental semiconductors; silicon; submillimetre wave detectors; submillimetre wave imaging; terahertz wave detectors; terahertz wave imaging; Si; drain current; field effect transistor sub-THz detector; gate source potential; high frequency continuous wave; imaging system; noise free realistic setup; nonantenna coupled gate; pulsed irradiation; responsivity enhancement technique; standard CMOS technology; Detectors; FETs; Imaging; Logic gates; Noise; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems (ISCAS), 2012 IEEE International Symposium on

Conference_Location

Seoul

ISSN

0271-4302

Print_ISBN

978-1-4673-0218-0

Type

conf

DOI

10.1109/ISCAS.2012.6272198

Filename

6272198