DocumentCode
3027972
Title
Monolithic Integration Of InAlGaAs/InGaAs FEts With MQW Modulators Operating At 1.06 μm On GaAs Substrates
Author
Shih, D.W. ; Fan, C. ; Hansen, M.W. ; Wieder, H.H. ; Esener, S.C.
Author_Institution
University of California
fYear
1994
fDate
6-13 Jul 1994
Keywords
Electrons; FETs; Gallium arsenide; HEMTs; Indium gallium arsenide; Intensity modulation; MODFET circuits; Monolithic integrated circuits; Optical modulation; Quantum well devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Optoelectronics, 1994., Proceedings of IEE/LEOS Summer Topical Meetings:
Print_ISBN
0-7803-1752-1
Type
conf
DOI
10.1109/LEOSST.1994.700424
Filename
700424
Link To Document