• DocumentCode
    3027972
  • Title

    Monolithic Integration Of InAlGaAs/InGaAs FEts With MQW Modulators Operating At 1.06 μm On GaAs Substrates

  • Author

    Shih, D.W. ; Fan, C. ; Hansen, M.W. ; Wieder, H.H. ; Esener, S.C.

  • Author_Institution
    University of California
  • fYear
    1994
  • fDate
    6-13 Jul 1994
  • Keywords
    Electrons; FETs; Gallium arsenide; HEMTs; Indium gallium arsenide; Intensity modulation; MODFET circuits; Monolithic integrated circuits; Optical modulation; Quantum well devices;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Integrated Optoelectronics, 1994., Proceedings of IEE/LEOS Summer Topical Meetings:
  • Print_ISBN
    0-7803-1752-1
  • Type

    conf

  • DOI
    10.1109/LEOSST.1994.700424
  • Filename
    700424