DocumentCode
3028139
Title
Observation of mechanisms of screen printed contact formation during heat treatment on multicrystalline silicon solar cells by transmission electron microscopy
Author
Thuillier, B. ; Berger, S. ; Boyeaux, J.P. ; Laugier, A.
Author_Institution
Lab. de Phys. de la Matiere, Inst. Nat. des Sci. Appliquees, Villeurbanne, France
fYear
2000
fDate
2000
Firstpage
411
Lastpage
413
Abstract
The aim of this study is to understand chemical and metallurgical mechanisms that occur in front side metallisation during heat treatments. Desoxidation of the paste, during firing, leads to the formation of a crystalline system in the upper part of the metallisation. At interface, the authors observe the creation of a new glass thanks to highly reactive titanium. EDS analysis shows that titanium migrates to the paste whereas metallic elements of the glass diffuse, by convection, close to crystalline silicon. This firing allows contact adherence to the cell but it needs an annealing to induce metallic elements diffusion in crystal. This step should be done under reducing gas for oxides dissociation. Contact ohmicity is not realized by the active metal but by metallic elements coming from glass oxides
Keywords
annealing; elemental semiconductors; heat treatment; semiconductor device measurement; semiconductor device testing; semiconductor-metal boundaries; silicon; solar cells; thick films; transmission electron microscopy; EDS analysis; Si; annealing; chemical mechanisms; contact adherence; contact ohmicity; convection; front side metallisation; heat treatment; metallic elements diffusion; metallurgical mechanisms; multicrystalline Si solar cells; oxides dissociation; screen printed contact formation mechanisms; transmission electron microscopy; Chemicals; Crystallization; Electrons; Glass; Heat treatment; Metallization; Photovoltaic cells; Semiconductor thin films; Silicon; Silver;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE
Conference_Location
Anchorage, AK
ISSN
0160-8371
Print_ISBN
0-7803-5772-8
Type
conf
DOI
10.1109/PVSC.2000.915855
Filename
915855
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