Title :
Optimisation of boron rear diffusion in buried contact solar cells
Author :
Slade, Alexander M. ; Honsberg, Christiana B. ; Wenham, Stuart R.
Author_Institution :
Centre for Photovoltaic Eng., New South Wales Univ., Sydney, NSW, Australia
Abstract :
Boron diffused rear surfaces are used in place of an Al/Si alloy to form a back surface field (BSF) for single sided buried contact (SSBC) cells. This was done as part of an investigation to determine the effect that heavy boron diffusions have on lifetime and saturation current. The findings are that a heavy boron diffusion over a large area can increase efficiency, since the bulk lifetime is retained and low saturation current is observed. SSBC solar cells were made that had open circuit voltages of 650 mV, 645 mV, and 640 mV on 3 and 10 Ω cm p-type, and 100 Ω cm (rear junction) n-type, respectively, using a heavily boron diffused region
Keywords :
boron; elemental semiconductors; semiconductor device measurement; semiconductor device testing; semiconductor doping; semiconductor-metal boundaries; silicon; solar cells; 10 ohmcm; 100 ohmcm; 3 ohmcm; 640 mV; 645 mV; 650 mV; Si; Si buried contact solar cells; back surface field; boron rear diffusion optimisation; bulk lifetime; efficiency improvement; heavy boron diffusions; lifetime; open circuit voltage; saturation current; Artificial intelligence; Boron alloys; Circuits; Degradation; Doping; Photovoltaic cells; Photovoltaic systems; Semiconductor process modeling; Silicon alloys; Voltage;
Conference_Titel :
Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE
Conference_Location :
Anchorage, AK
Print_ISBN :
0-7803-5772-8
DOI :
10.1109/PVSC.2000.915856
