Title :
InP-based monolithically integrated photoreceivers
Author_Institution :
AT&T Bell Labs.-Res., Holmdel, NJ, USA
Abstract :
Photoreceivers, composed by a InGaAs photodetector monolithically integrated with either field-effect or bipolar transistor-based amplifiers, have achieved high-speed and high-sensitivities up to 20 Gb/s in single channel or aggregated throughput in multichannel configurations. A review of high performance InP-based technologies targeted to fiber optic communication applications is presented
Keywords :
III-V semiconductors; indium compounds; integrated optoelectronics; optical receivers; 20 Gbit/s; InGaAs photodetector; InP; amplifier; bipolar transistor; fiber optic communication; field effect transistor; high-speed device; monolithically integrated photoreceiver; multichannel configuration; sensitivity; single channel configuration; Bandwidth; Bipolar transistors; Epitaxial growth; HEMTs; MODFETs; Molecular beam epitaxial growth; Optical amplifiers; Optical receivers; PIN photodiodes; Photodetectors;
Conference_Titel :
Indium Phosphide and Related Materials, 1997., International Conference on
Conference_Location :
Cape Cod, MA
Print_ISBN :
0-7803-3898-7
DOI :
10.1109/ICIPRM.1997.600196
