DocumentCode
3028361
Title
Cu(InAl)Se2 thin films and devices deposited by multisource evaporation [solar cells]
Author
Haimbodi, M.W. ; Gourmelon, E. ; Paulson, P.D. ; Birkmire, R.W. ; Shafarman, W.N.
Author_Institution
Inst. of Energy Conversion, Delaware Univ., Newark, DE, USA
fYear
2000
fDate
2000
Firstpage
454
Lastpage
457
Abstract
Cu(InAl)Se2 is investigated as an alternative high bandgap alloy of CulnSe2 for achieving devices and modules with greater performance as bandgap and VOC increase. Device efficiencies with Cu(InGa)Se2 and CuIn(SeS)2 decrease for bandgap greater than 1.3 eV. In this work, Cu(InAl)Se2 thin films were deposited by four-source elemental evaporation with a composition range of 0⩽Al/(In+Al)⩽0.65 corresponding to a bandgap range 1.0⩽Eg⩽1.8 eV. All films are single phase as determined by X-ray diffraction. Characterization of optical and structural properties of the films shows that the effect of increasing Al content on bandgap and lattice spacing agrees with the results on Cu(InAl)Se2 crystals and with calculated values. Solar cells with structure glass/Mo/Cu(InAl)Se2/CdS/ZnO were fabricated. The best cells have 11% efficiency and VOC increases with increasing Al content to greater than 0.7 V
Keywords
X-ray diffraction; aluminium compounds; copper compounds; energy gap; evaporation; indium compounds; semiconductor device measurement; semiconductor device testing; semiconductor thin films; solar cells; 11 percent; Cu(InAl)Se2; Cu(InAl)Se2 thin film solar cells; Mo-Cu(InAl)Se2-CdS-ZnO; X-ray diffraction; four-source elemental evaporation; glass/Mo/Cu(InAl)Se2/CdS/ZnO solar cells; high bandgap alloy; lattice spacing; multisource evaporation deposition; open circuit voltage; optical properties; structural properties; Crystals; Glass; Lattices; Optical diffraction; Optical films; Photonic band gap; Photovoltaic cells; Sputtering; X-ray diffraction; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE
Conference_Location
Anchorage, AK
ISSN
0160-8371
Print_ISBN
0-7803-5772-8
Type
conf
DOI
10.1109/PVSC.2000.915868
Filename
915868
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