Electronic structures and defect physics of Cd-based semiconductors

Author

Wei, Su-Huai ; Zhang, S.B.

Author_Institution

Nat. Renewable Energy Lab., Golden, CO, USA

fYear

2000

fDate

2000

Firstpage

483

Lastpage

486

Abstract

Using a first-principles band structure method we have systematically studied the electronic properties of Cd-based compounds, alloys and interfaces. We compared the stabilities and band structures of CdX (X=S, Se, Te) in zinc-blende and wurtzite structures. We calculated the mixing enthalpies and optical bowing coefficients of mixed-anion Cd alloys and the band offsets between the Cd compounds. We also calculated the defect formation energies and the defect transition energy levels of point defects and defect complexes in CdTe to search for the best p-type dopant for CdTe

Keywords

II-VI semiconductors; band structure; cadmium compounds; defect states; enthalpy; heat of mixing; optical constants; point defects; semiconductor thin films; solar cells; Cd-based alloys; Cd-based compounds; Cd-based interfaces; Cd-based semiconductors; CdS; CdSe; CdTe; band offsets; band structures; defect complexes; defect formation energies; defect physics; defect transition energy levels; electronic properties; electronic structures; first-principles band structure method; mixed-anion Cd alloys; mixing enthalpies; optical bowing coefficients; p-type dopant; point defects; stabilities; thin film solar cells; wurtzite structures; zinc-blende structures; Energy states; Laboratories; Optical films; Optical mixing; Photonic band gap; Photovoltaic cells; Physics; Renewable energy resources; Semiconductor materials; Tellurium;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE

Conference_Location

Anchorage, AK

ISSN

0160-8371

Print_ISBN

0-7803-5772-8

Type

conf

DOI

10.1109/PVSC.2000.915877

Filename

915877