Title :
Fabrication of graded Cu(InGa)Se2 films by inline evaporation
Author :
Hanket, G.M. ; Paulson, P.D. ; Singh, U. ; Junker, S.T. ; Birkmire, R.W. ; Doyle, F.J., III ; Eser, E. ; Shafarman, W.N.
Author_Institution :
Inst. of Energy Conversion, Delaware Univ., Newark, DE, USA
Abstract :
An inline evaporation system for depositing Cu(InGa)Se2 films from elemental sources was characterized. The system demonstrated reproducibly good deposition uniformity and device performance for translation speeds ranging from 1 to 2.5 inches/min. A source effusion model predicting film thickness, composition, and compositional gradients was developed and tested. The effusion model was reasonably successful in predicting measured film characteristics. The model can be further improved by a more accurate description of the flux profiles. In addition, effusion in the transitional flow regime and the possibility of Ga-ln interdiffusion need to be explored. Such an improved model would be a valuable tool for the design and development of commercial scale systems, as well as for improved efficiency and flexibility in manufacturing
Keywords :
copper compounds; gallium compounds; indium compounds; semiconductor growth; semiconductor thin films; solar cell arrays; ternary semiconductors; vacuum deposited coatings; vacuum deposition; Cu(InGa)Se2; Cu(InGa)Se2 films deposition; compositional gradients; deposition uniformity; device performance; film composition; film thickness prediction; flux profiles; graded Cu(InGa)Se2 films fabrication; improved efficiency; inline evaporation; manufacturing flexibility; solar modules; source effusion model; Absorption; Atomic measurements; Fabrication; IEC; Laboratories; Process control; Substrates; Temperature control; Temperature measurement; Temperature sensors;
Conference_Titel :
Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE
Conference_Location :
Anchorage, AK
Print_ISBN :
0-7803-5772-8
DOI :
10.1109/PVSC.2000.915881
